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2005 | 107 | 2 | 369-372
Article title

Microplasma Noise Stimulated by Microwave Electric Field

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EN
Abstracts
EN
Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10^8 K.
Keywords
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
  • Department of Physics, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius 10223, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
References
  • 1. J. Pozhela, Plasma and Current Instabilities in Semiconductors, Pergamon Press, Oxford 1981
  • 2. K.G. McKay, Phys. Rev., 94, 877, 1954
  • 3. A.M. Namajunas, J.K. Pozela, A.V. Tamasevicius, Fiz. Tekhn. Poluprovod., 23, 1606, 1989
  • 4. A.M. Namajunas, J.K. Pozela, A.V. Tamasevicius, Doklady AN SSSR, 307, 102, 1989
  • 5. V.K. Aladinsky, V.I. Dashin, A.S. Sushchik, A.M. Timerbulatov, Radiotekh. Elektron., 18, 342, 1973
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n230kz
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