Microplasma Noise Stimulated by Microwave Electric Field

• Authors: A. Namajūnas , A. Tamaševičius , G. Mykolaitis , S. Bumelienė , J. Požela
• Languages of publication: EN

Abstracts

EN

Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10^8 K.

Keywords

EN

05.40.Ca; 52.25.Gj; 72.70.+m; 85.30.-z

Discipline

• 05.40.Ca: Noise
• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 72.70.+m: Noise processes and phenomena
• 52.25.Gj: Fluctuation and chaos phenomena(for plasma turbulence, see 52.35.Ra; see also 05.45.-a Nonlinear dynamics and chaos)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 369-372

Dates

published

2005-02

received

2004-08-22

Contributors

author

A. Namajūnas

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania

author

A. Tamaševičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania

author

G. Mykolaitis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
• Department of Physics, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius 10223, Lithuania

author

S. Bumelienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania

author

J. Požela

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania

References

• 1. J. Pozhela, Plasma and Current Instabilities in Semiconductors, Pergamon Press, Oxford 1981
• 2. K.G. McKay, Phys. Rev., 94, 877, 1954
• 3. A.M. Namajunas, J.K. Pozela, A.V. Tamasevicius, Fiz. Tekhn. Poluprovod., 23, 1606, 1989
• 4. A.M. Namajunas, J.K. Pozela, A.V. Tamasevicius, Doklady AN SSSR, 307, 102, 1989
• 5. V.K. Aladinsky, V.I. Dashin, A.S. Sushchik, A.M. Timerbulatov, Radiotekh. Elektron., 18, 342, 1973

Identifiers

DOI

10.12693/APhysPolA.107.369