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2005 | 107 | 2 | 361-364
Article title

Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN

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EN
Abstracts
EN
Microwave noise temperature, current, and dissipated power were investigated at room temperature in undoped AlGaN/AlN/GaN channels grown by molecular beam epitaxy and metal-organic compound vapour decomposition techniques. Samples with essentially the same electron density (1×10^{13} cm^{-2}) and low-field mobility (1150 cm^2/(V s)) demonstrated considerably different behaviour at high electric fields. The effective hot-phonon lifetime, 300 fs and 1000 fs, respectively, was estimated for molecular beam epitaxy and metal-organic compound vapour decomposition samples. The expected anti-correlation of hot-phonon lifetime and hot-electron drift velocity was confirmed experimentally.
Keywords
EN
Publisher

Year
Volume
107
Issue
2
Pages
361-364
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Cornell University, Ithaca, NY, USA
author
  • Cornell University, Ithaca, NY, USA
author
  • Cornell University, Ithaca, NY, USA
author
  • Cornell University, Ithaca, NY, USA
author
  • Cornell University, Ithaca, NY, USA
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n228kz
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