Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN

• Authors: A. Matulionis , J. Liberis , L. Eastman , W. Schaff , J. Shealy , X. Chen , Y. Sun
• Languages of publication: EN

Abstracts

EN

Microwave noise temperature, current, and dissipated power were investigated at room temperature in undoped AlGaN/AlN/GaN channels grown by molecular beam epitaxy and metal-organic compound vapour decomposition techniques. Samples with essentially the same electron density (1×10^{13} cm^{-2}) and low-field mobility (1150 cm^2/(V s)) demonstrated considerably different behaviour at high electric fields. The effective hot-phonon lifetime, 300 fs and 1000 fs, respectively, was estimated for molecular beam epitaxy and metal-organic compound vapour decomposition samples. The expected anti-correlation of hot-phonon lifetime and hot-electron drift velocity was confirmed experimentally.

Keywords

EN

63.20.Kr; 72.20.Ht; 73.40.Kp

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 361-364

Dates

published

2005-02

received

2004-08-22

Contributors

author

A. Matulionis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

L. Eastman

• Cornell University, Ithaca, NY, USA

author

W. Schaff

• Cornell University, Ithaca, NY, USA

author

J. Shealy

• Cornell University, Ithaca, NY, USA

author

X. Chen

• Cornell University, Ithaca, NY, USA

author

Y. Sun

• Cornell University, Ithaca, NY, USA

References

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Identifiers

DOI

10.12693/APhysPolA.107.361