Journal
Article title
Authors
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Abstracts
Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al_xGa_{1-x}As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al_xGa_{1-x}As which was monitored by photoluminescence technique.
Discipline
- 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
- 84.40.-x: Radiowave and microwave (including millimeter wave) technology(for microwave, submillimeter wave, and radiowave receivers and detectors, see 07.57.Kp; for microwave and radiowave spectrometers, see 07.57.Pt; for radiowave propagation, see 41.20.Jb)
- 72.20.Ht: High-field and nonlinear effects
Journal
Year
Volume
Issue
Pages
315-318
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
References
- 1. S. Asmontas, J. Gradauskas, V. Petkun, A. Suziedelis, Lithuanian J. Phys., 43, 345, 2003
- 2. S. Asmontas, J. Gradauskas, J. Kundrotas, A. Su ziedelis, A. Silenas, G. Valusis, in: Proc. 24th Int. Conf. on Physics of Semiconductors 24ICPS'98, Jerusalem (Israel) 1998, Ed. D. Gershoni, CD-ROM (1193.pdf), World Scientific, Singapore 1999
- 3. S. Asmontas, A. Suziedelis, J. Thermoelectricity, 1, 5, 1997
- 4. S. Asmontas, A. Skuciene, Fiz. Tekh. Poluprovodn., 27, 207, 1993
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n219kz