High Power Microwave Detection in Asymmetrically Shaped n-Al_xGa_{1-x}As Structures

• Authors: S. Ašmontas , A. Čerškus , J. Gradauskas , J. Kundrotas , A. Lučun , V. Petkun , A. Sužiedėlis , A. Šilėnas
• Languages of publication: EN

Abstracts

EN

Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al_xGa_{1-x}As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al_xGa_{1-x}As which was monitored by photoluminescence technique.

Keywords

EN

07.57.Kp; 84.40.-x; 72.20.Ht

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 84.40.-x: Radiowave and microwave (including millimeter wave) technology(for microwave, submillimeter wave, and radiowave receivers and detectors, see 07.57.Kp; for microwave and radiowave spectrometers, see 07.57.Pt; for radiowave propagation, see 41.20.Jb)
• 72.20.Ht: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 315-318

Dates

published

2005-02

received

2004-08-22

Contributors

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Čerškus

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Kundrotas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Lučun

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Petkun

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Šilėnas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. S. Asmontas, J. Gradauskas, V. Petkun, A. Suziedelis, Lithuanian J. Phys., 43, 345, 2003
• 2. S. Asmontas, J. Gradauskas, J. Kundrotas, A. Su ziedelis, A. Silenas, G. Valusis, in: Proc. 24th Int. Conf. on Physics of Semiconductors 24ICPS'98, Jerusalem (Israel) 1998, Ed. D. Gershoni, CD-ROM (1193.pdf), World Scientific, Singapore 1999
• 3. S. Asmontas, A. Suziedelis, J. Thermoelectricity, 1, 5, 1997
• 4. S. Asmontas, A. Skuciene, Fiz. Tekh. Poluprovodn., 27, 207, 1993

Identifiers

DOI

10.12693/APhysPolA.107.315