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2005 | 107 | 2 | 310-314
Article title

Hot-Electron Transport and Microwave Noise in 4H-SiC

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EN
Abstracts
EN
Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n=2×10^{17} cm^{-3}) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.
Keywords
EN
Contributors
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n218kz
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