Hot-Electron Transport and Microwave Noise in 4H-SiC

• Authors: L. Ardaravičius , J. Liberis , O. Kiprijanovič , I. Matulionienė , A. Matulionis
• Languages of publication: EN

Abstracts

EN

Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n=2×10^{17} cm^{-3}) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.

Keywords

EN

72.20.Ht; 72.70.+m; 73.40.Kp

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 310-314

Dates

published

2005-02

received

2004-08-22

Contributors

author

L. Ardaravičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

O. Kiprijanovič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

I. Matulionienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

A. Matulionis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.310