PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 107 | 2 | 304-309
Article title

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Content
Title variants
Languages of publication
EN
Abstracts
EN
Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.7} Ga_{0.3}As/In_{0.52}Al_{0.48}As two-dimensional electron gas channel (n_{2D}=2.3×10^{12} cm^{-2}). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.
Keywords
EN
Year
Volume
107
Issue
2
Pages
304-309
Physical description
Dates
published
2005-02
received
2004-08-22
References
  • 1. S. Tiwari, Compound Semiconductor Device Physics, Academic Press, New York 2002
  • 2. P. Kocevar, Physica B+C, 134, 155, 1985
  • 3. A. Matulionis, J. Liberis, I. Matulioniene, M. Ramonas, L.F. Eastman, J.R. Shealy, V. Tilak, A. Vertiatchikh, Phys. Rev. B, 68, 035338, 2003
  • 4. A. Matulionis, V. Aninkevicius, J. Liberis, I. Matulioniene, J. Berntgen, K. Heime, H.L. Hartnagel, Appl. Phys. Lett., 1974 1895, 1999
  • 5. H.L. Hartnagel, R. Katilius, A. Matulionis, Microwave Noise in Semiconductor Devices, Wiley, New York 2001
  • 6. L. Ardaravicius, J. Liberis, A. Matulionis, M. Ramonas, Fluctuation and Noise Letters, 2, L53, 2002
  • 7. P. Bordone, P. Lugli, Phys. Rev. B, 49, 8178, 1994
  • 8. K.T. Tsen, H. Morkoc, Phys. Rev. B, 38, 5615, 1988
  • 9. E. Kobayashi, C. Hamaguchi, T. Matsuoka, K. Taniguchi, IEEE Trans. Electron Dev., 36, 2353, 1989
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n217kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.