Hot Phonons in a Biased Two-Dimensional InGaAs Channel

• Authors: V. Aninkevičius , J. Liberis , A. Matulionis , I. Matulionienė
• Languages of publication: EN

Abstracts

EN

Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As/In_{0.7} Ga_{0.3}As/In_{0.52}Al_{0.48}As two-dimensional electron gas channel (n_{2D}=2.3×10^{12} cm^{-2}). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field.

Keywords

EN

63.20.Kr; 72.20.Ht

Discipline

• 72.20.Ht: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 304-309

Dates

published

2005-02

received

2004-08-22

Contributors

author

V. Aninkevičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

J. Liberis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

A. Matulionis

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

author

I. Matulionienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania

References

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• 4. A. Matulionis, V. Aninkevicius, J. Liberis, I. Matulioniene, J. Berntgen, K. Heime, H.L. Hartnagel, Appl. Phys. Lett., 1974 1895, 1999
• 5. H.L. Hartnagel, R. Katilius, A. Matulionis, Microwave Noise in Semiconductor Devices, Wiley, New York 2001
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• 9. E. Kobayashi, C. Hamaguchi, T. Matsuoka, K. Taniguchi, IEEE Trans. Electron Dev., 36, 2353, 1989

Identifiers

DOI

10.12693/APhysPolA.107.304