PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 107 | 2 | 298-303
Article title

Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

Content
Title variants
Languages of publication
EN
Abstracts
EN
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.
Keywords
Contributors
author
  • Institute for Physics of Microstructures, Nizhny Novgorod GSP-105 603600, Russia
author
  • National Nanotechnology Laboratory of INFM, Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy
author
  • National Nanotechnology Laboratory of INFM, Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy
References
  • 1. V.Ya. Aleshkin, L. Reggiani, N.V. Alkeev, V.E. Lyubchenko, C.N. Ironside, J.M.L. Figuerido, C.R. Stanley, cond-matter/0304077 (2003), Phys. Rev. B, 70, 115321, 2004
  • 2. D.V. Averin, J. Appl. Phys., 73, 2593, 1993
  • 3. Y.M. Blanter, M. Buttiker, Phys. Rev. B, 59, 10217, 1999
  • 4. Y. Wei, B. Wang, J. Wang, H. Guo, Phys. Rev. B, 60, 16900, 1999
  • 5. G. Iannaccone, M. Macucci, B. Pellegrini, Phys. Rev. B, 55, 4539, 1997
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n216kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.