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Number of results
2005 | 107 | 2 | 261-266
Article title

Vertical Electron Transport in GaN/AlGaN Heterostructures

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EN
Abstracts
EN
Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, A. GoŇ°tauto 11, 01108 Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n208kz
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