Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content

• Authors: S. Miasojedovas , S. Juršėnas , G. Kurilčik , A. Žukauskas , M. Springis , I. Tale , C. Yang
• Languages of publication: EN

Abstracts

EN

We report on high-excitation luminescence spectroscopy of In_xGa_{1-x}N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.

Keywords

EN

78.45.+h; 78.47.+p; 78.67.De

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 78.67.De: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 2
• Pages: 256-260

Dates

published

2005-02

received

2004-08-22

Contributors

author

S. Miasojedovas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania

author

S. Juršėnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania

author

G. Kurilčik

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania

author

A. Žukauskas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania

author

M. Springis

• Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, Riga, 10363, Latvia

author

I. Tale

• Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, Riga, 10363, Latvia

author

C. Yang

• Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C

References

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Identifiers

DOI

10.12693/APhysPolA.107.256