PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 107 | 2 | 256-260
Article title

Stimulated Emission in InGaN/GaN Multiple Quantum Wells with Different Indium Content

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on high-excitation luminescence spectroscopy of In_xGa_{1-x}N/GaN multiple quantum wells with a high indium content (x=0.22÷0.30). High excitation conditions enabled us to achieve screening of built-in field by free carriers. This allowed for the evaluation of the influence of the band potential fluctuations due to variation in In-content on optical properties. Enhanced spontaneous emission was found for x≫0.22 due to carrier localization within the chaotic band potential. Meanwhile the stimulated emission was found to be the highest for structures with x≈ 0.25-0.27. We attribute the In-content dependence of the stimulated emission intensity to a trade-off between an increased carrier density and a decrease in the density of states.
Keywords
EN
Publisher

Year
Volume
107
Issue
2
Pages
256-260
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
  • Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, Riga, 10363, Latvia
author
  • Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, Riga, 10363, Latvia
author
  • Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, 1 Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C
References
  • 1. S. Nakamura, S.F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, Taylor& Francis, London 2000
  • 2. L. Bellaiche, T. Mattila, L.W. Wang, S.H. Wei, A. Zunger, Appl. Phys. Lett., 74, 1842, 1999
  • 3. Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, S. Nakamura, Appl. Phys. Lett., 77, 2151, 2000
  • 4. K. Omae, Y. Kawakami, S. Fujita, Y. Narukawa, T. Mukai, Phys. Rev. B, 68, 085303, 2003
  • 5. S. Miasojedovas, S. Jursenas, G. Kurilcik, A. Zukauskas, S.W. Feng, C.C. Yang, H.-W. Chuang, C.T. Kuo, J.S. Tsang, Phys. Status Solidi C, 0, 483, 2002
  • 6. S. Miasojedovas, S. Jursenas, G. Kurilcik, A. Zukauskas, Y.-C. Cheng, T.-Y. Tang, C.C. Yang, C.-T. Kuo, J.-S. Tsang, Phys. Status Solidi C, 0, 2610, 2003
  • 7. S. Jursenas, G. Kurilcik, N. Kurilcik, A. Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin, I. Grzegory, S. Porowski, Appl. Phys. Lett., 78, 3776, 2001
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n207kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.