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2005 | 107 | 2 | 240-244
Article title

Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques

Content
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Languages of publication
EN
Abstracts
EN
Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm^2, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ_e=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm^2/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm^2. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission.
Keywords
EN
Year
Volume
107
Issue
2
Pages
240-244
Physical description
Dates
published
2005-02
received
2004-08-22
References
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  • 6. F. Binet, J.Y. Duboz, J. Off, F. Scholz, Phys. Rev. B, 60, 4715, 1999
  • 7. S. Jursenas, G. Kurilcik, N. Kurilcik, A. Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin, I. Grzegory, S. Porowski, Appl. Phys. Lett., 78, 3776, 2001
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n204kz
Identifiers
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