PL EN


Preferences help
enabled [disable] Abstract
Number of results
2005 | 107 | 2 | 235-239
Article title

Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes

Content
Title variants
Languages of publication
EN
Abstracts
EN
GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm^2. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
Keywords
Year
Volume
107
Issue
2
Pages
235-239
Physical description
Dates
published
2005-02
received
2004-08-22
References
  • 1. S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer, Berlin 1997
  • 2. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, K.H. Ploog, J. Cryst. Growth, 218, 143, 2000
  • 3. M.D. Craven, P. Waltereit, J.S. Speck, S.P. DenBaars, Appl. Phys. Lett., 84, 496, 2004
  • 4. Y.J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H.T. Grahn, K.H. Ploog, P. Waltereit, J.S. Speck, Phys. Rev. B, 67, 041306, 2003
  • 5. W.H. Sun, J.W. Yang, C.Q. Chen, J.P. Zhang, M.E. Gaevski, E. Kuokstis, V. Adivarahan, H.M. Wang, Z. Gong, M. Su, M.A. Khan, Appl. Phys. Lett., 83, 2599, 2003
  • 6. C.Q. Chen, J.W. Yang, H.M. Wang, J.P. Zhang, V. Adivarahan, M. Gaevski, E. Kuokstis, Z. Gong, M. Su, M.A. Khan, Jpn. J. Appl. Phys., 42, L640, 2003
  • 7. F. Binet, J.Y. Duboz, J. Off, F. Scholz, Phys. Rev. B, 60, 4715, 1999
  • 8. S. Jursenas, G. Kurilcik, N. Kurilcik, A. Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, P. Perlin, I. Grzegory, S. Porowski, Appl. Phys. Lett., 78, 3776, 2001
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n203kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.