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Abstracts
We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Discipline
Journal
Year
Volume
Issue
Pages
225-229
Physical description
Dates
published
2005-02
received
2004-08-22
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
- Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
- Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
- Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
author
- High Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n201kz