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2005 | 107 | 2 | 225-229
Article title

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

Content
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Languages of publication
EN
Abstracts
EN
We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Keywords
Year
Volume
107
Issue
2
Pages
225-229
Physical description
Dates
published
2005-02
received
2004-08-22
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n201kz
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