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2005 | 107 | 1 | 215-219
Article title

Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

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EN
Abstracts
EN
The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients.
Keywords
EN
Contributors
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania
References
  • 1. S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer-Verlag, Berlin 1997
  • 2. A. Zukauskas, M.S. Shur, R. Gaska, Introduction to Solid-State Lighting, Wiley, New York 2002
  • 3. M. Albrecht, H.P. Strunk, J.L. Weyher, I. Grzegory, S. Porowski, T. Wosinski, J. Appl. Phys., 92, 2000, 2002
  • 4. E. Gaubas, Lithuanian J. Phys., 43, 145, 2003
  • 5. J. Bai, T. Wang, Y. Izumi, S. Sakai, J. Cryst. Growth, 223, 61, 2001
  • 6. S. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, P.R. Hageman, Appl. Phys. Lett., 83, 66, 2003
  • 7. P. Landsberg, Recombination in Semiconductors, Cambridge University Press, Cambridge 1991
  • 8. H.F. Mataré, Defect Electronics in Semiconductors, Wiley-Interscience, New York 1971
  • 9. G. Pfister, H. Sher, Adv. Phys., 27, 747, 78
  • 10. L. Pavesi, J. Appl. Phys., 80, 216, 1996
  • 11. S. Havlin, D. Ben-Avraham, Adv. Phys., 51, 187, 2002
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n132kz
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