Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

• Authors: S. Balevičius , V. Stankevič , N. Žurauskienė , Č. Šimkevičius , J. Paršeliūnas , P. Cimmperman , A. Abrutis , V. Plaušinaitienė
• Languages of publication: EN

Abstracts

EN

The magnetoresistance anisotropy of ultrathin La_{0.83}Sr_{0.17}Mn O_3 films deposited on NdGaO_3 substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.

Keywords

EN

75.47.Gk; 75.30.Gw; 73.50.-h; 68.55.Jk

Discipline

• 75.30.Gw: Magnetic anisotropy
• 75.47.Gk: Colossal magnetoresistance
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 203-206

Dates

published

2005-01

received

2004-08-22

Contributors

author

S. Balevičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

N. Žurauskienė

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

Č. Šimkevičius

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

J. Paršeliūnas

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

P. Cimmperman

• Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania

author

A. Abrutis

• Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

author

V. Plaušinaitienė

• Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

References

• 1. Y. Lu, X.W. Li, G.Q. Gong, G. Xiao, A. Gupta, Ph. Lecoeur, J.-Z. Sun, Y. Ywang, V.P. Dravid, Phys. Rev. B, 54, R8357, 1996
• 2. A.M. Haghiri-Gosnet, J.P. Renard, J. Phys. D, Appl. Phys., 36, R127, 2003
• 3. H.L. Ju, K.M. Krishnan, D. Lederman, J. Appl. Phys., 83, 7073, 1998

Identifiers

DOI

10.12693/APhysPolA.107.203