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2005 | 107 | 1 | 198-202
Article title

Hot Electron Effect in Degenerate Semiconductor Tunnel Junction

Content
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Languages of publication
EN
Abstracts
EN
We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.
Keywords
EN
Year
Volume
107
Issue
1
Pages
198-202
Physical description
Dates
published
2005-01
received
2004-08-22
References
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  • 6. S. Asmontas, Electrogradient Phenomena in Semiconductors, Mokslas, Vilnius 1984, p. 184
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  • 8. S. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, G. Valusis, E. Sirmulis, in: Proc. Int. Conf. on Advanced Optical Devices, Technologies, and Medical Applications, Eds. J. Spigulis, J. Teteris, M. Ozolinsh, A. Lusis, Proc. SPIE, 5123, 221, 2003
  • 9. K. Seeger, Semiconductor Physics, Springer-Verlag, Wien 1973, p. 563
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n128kz
Identifiers
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