Hot Electron Effect in Degenerate Semiconductor Tunnel Junction

• Authors: S. Ašmontas , J. Gradauskas , V. Petkun , D. Seliuta , A. Sužiedėlis , A. Urbelis
• Languages of publication: EN

Abstracts

EN

We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.

Keywords

EN

72.20.Ht   73.40.Gk   07.57.Kp  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 198-202

Dates

published

2005-01

received

2004-08-22

References

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Identifiers

DOI

10.12693/APhysPolA.107.198