Journal
Article title
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Abstracts
We report on the results of experimental study of free carrier heating in degenerate GaAs tunnel p-n diodes when the carriers are excited by pulsed microwave radiation. Free carrier heating is responsible for the electromotive force in the diode. The magnitude of the electromotive force linearly depends on pulsed microwave power and increases with the decrease in semiconductor lattice temperature. It is almost independent of the pulsed microwave frequency and of p-n junction plane orientation in respect to electric field direction. In the tunnelling regime the dark current in the diode is reduced, however, at high enough forward bias the diffusive current is stimulated due to hot carrier phenomenon.
Discipline
- 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
- 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
- 72.20.Ht: High-field and nonlinear effects
Journal
Year
Volume
Issue
Pages
198-202
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
- Semiconductor Physics Institute, A. Gotauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gotauto 11, 01108 Vilnius, Lithuania
- Vilnius Gediminas Technical University, Saultekio 11, 10223 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gotauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gotauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Gotauto 11, 01108 Vilnius, Lithuania
- Vilnius Gediminas Technical University, Saultekio 11, 10223 Vilnius, Lithuania
author
- Vilnius Gediminas Technical University, Saultekio 11, 10223 Vilnius, Lithuania
References
- 1. S.Y. Liao, Microwave Devices and Circuits, 3rd ed., Prentice-Hall, New Jersey 1990, p. 525
- 2. F.C. Wellstood, C. Urbina, J. Clarke, Phys. Rev. B, 49, 5942, 1994
- 3. S. Asmontas, J. Gradauskas, A. Suziedelis, E. Sirmulis, G. Valusis, Lithuanian J. Phys., 40, 15, 2000
- 4. S. Asmontas, J. Gradauskas, D. Seliuta, A. Su ziedelis, E. Sirmulis, G. Valusis, J. Thermoelectricity, 4, 15, 1998
- 5. A. Suziedelis, J. Gradauskas, S. Asmontas, G. Valu sis, H.G. Roskos, J. Appl. Phys., 93, 3034, 2003
- 6. S. Asmontas, Electrogradient Phenomena in Semiconductors, Mokslas, Vilnius 1984, p. 184
- 7. A. Dargys, J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP, Science and Encyclopedia, Vilnius 1994, p. 264
- 8. S. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, G. Valusis, E. Sirmulis, in: Proc. Int. Conf. on Advanced Optical Devices, Technologies, and Medical Applications, Eds. J. Spigulis, J. Teteris, M. Ozolinsh, A. Lusis, Proc. SPIE, 5123, 221, 2003
- 9. K. Seeger, Semiconductor Physics, Springer-Verlag, Wien 1973, p. 563
- 10. S. Asmontas, L. Subacius, Lithuanian J. Phys., 15, 789, 1975
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n128kz