Frequency Dependence of Electrical Response of Polycrystalline LCMO Thin Films

• Authors: S. Ašmontas , F. Anisimovas , S. Balevičius , P. Cimmperman , J. Gradauskas , A. Lučun , V. Stankevič , A. Sužiedėlis , B. Vengalis , N. Žurauskienė
• Languages of publication: EN

Abstracts

EN

Influence of strong electric field in wide frequency range (from DC to 35 GHz) on electrical resistance of thin La_{0.67}Ca_{0.33}MnO_3 polycrystalline manganite films was investigated in the range of (78÷300) K. Different behavior of resistance change vs. temperature was observed when pulsed DC electric field and microwaves were applied to the films. When pulsed DC electric field is applied the electric-field-induced resistance change ("electroresistance") of manganite film depended nearly monotonically on temperature. However, in microwave electric fields a non-monotonic character of the electroresistance temperature dependence was observed. The dependence of the electroresistance on quality of manganite films was observed in case of microwaves. The experimental findings are explained assuming different electrical current mechanisms in case of DC and microwave fields. The applied voltage drops mainly across the grains of polycrystalline film due to a presence of displacement currents in case of microwaves, whereas in DC case the voltage drop is across the grain boundaries.

Keywords

EN

75.47.Gk; 75.47.Lx; 07.57.Kp

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 75.47.Gk: Colossal magnetoresistance
• 75.47.Lx: Magnetic oxides

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 193-197

Dates

published

2005-01

received

2004-08-22

Contributors

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
• KTU Panevėžys Institute, Klaipėdos 3, 5319 Panevėžys

author

F. Anisimovas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Balevičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

P. Cimmperman

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute,, A. Goštauto 11, 01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

A. Lučun

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute,, A. Goštauto 11, 01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

B. Vengalis

• Semiconductor Physics Institute,, A. Goštauto 11, 01108 Vilnius, Lithuania
• Vilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania

author

N. Žurauskienė

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. S. Asmontas, A. Abrutis, J. Gradauskas, A. Lucun, A. Oginskis, V. Plausinaitiene, A. Suziedelis, B. Vengalis, Acta Phys. Pol. A, 105, 141, 2004
• 2. P. Cimmperman, V. Stankevic, N. Zurauskiene, S. Balevicius, F. Anisimovas, J. Parseliunas, O. Kiprijanovic, L.L. Altgilbers, Acta Phys. Pol. A, 105, 107, 2004
• 3. A. Asamitsu, Y. Tomioka, H. Kuwahara, Y. Tokura, Nature, 388, 50, 1997
• 4. S.B. Ogale, V. Talyansky, C.H. Chen, R. Ramesh, R.L. Greene, T. Venkatesan, Phys. Rev. Lett., 77, 1159, 1996
• 5. N.I. Solin, A.A. Samochvalov, S.V. Naumov, Fiz. Tverd. Tel., 40, 1881, 1998

Identifiers

DOI

10.12693/APhysPolA.107.193