Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes

• Authors: G. Valušis , D. Seliuta , V. Tamošiūnas , E. Širmulis , S. Balakauskas , J. Gradauskas , A. Sužiedėlis , S. Ašmontas , T. Anbinderis , A. Narkūnas , I. Papsujeva , A. Lisauskas , H. Roskos , K. Köhler
• Languages of publication: EN

Abstracts

EN

We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.

Keywords

EN

73.50.-h; 85.30.De; 72.30.+q

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 72.30.+q: High-frequency effects; plasma effects

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 184-187

Dates

published

2005-01

received

2004-08-22

Contributors

author

G. Valušis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
• Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany

author

D. Seliuta

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Tamošiūnas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

E. Širmulis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

T. Anbinderis

• Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania

author

A. Narkūnas

• Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania

author

I. Papsujeva

• Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania

author

A. Lisauskas

• Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany

author

H. Roskos

• Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany

author

K. Köhler

• Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

References

• 1. W. Knap, Y. Deng, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 81, 4637, 2002
• 2. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lu, R. Gaska, M. Shur, G. Simin, X. Hu, M. Asif Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys., 91, 9346, 2002
• 3. Y. Kawaguchi, K. Hirakawa, S. Komiyama, Appl. Phys. Lett., 80, 3418, 2002
• 4. S. Asmontas, A. Suziedelis, Int. J. Infrared Millim. Waves, 15, 525, 1994
• 5. D. Seliuta, V. Tamosiunas, E. Sirmulis, S. Asmontas, A. Suziedelis, J. Gradauskas, G. Valusis, P. Steenson, W.-H. Chow, P. Harrison, A. Lisauskas, H.G. Roskos, K. Kohler, Proc. 27th Int. Conf. on Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004, submitted for publication

Identifiers

DOI

10.12693/APhysPolA.107.184