Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
Discipline
- 85.30.De: Semiconductor-device characterization, design, and modeling
- 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
- 72.30.+q: High-frequency effects; plasma effects
Journal
Year
Volume
Issue
Pages
184-187
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
- Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania
author
- Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania
author
- Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania
author
- Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany
author
- Physikalisches Institut der J.W. Goethe-Universität, 60054 Frankfurt/M, Germany
author
- Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany
References
- 1. W. Knap, Y. Deng, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 81, 4637, 2002
- 2. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lu, R. Gaska, M. Shur, G. Simin, X. Hu, M. Asif Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys., 91, 9346, 2002
- 3. Y. Kawaguchi, K. Hirakawa, S. Komiyama, Appl. Phys. Lett., 80, 3418, 2002
- 4. S. Asmontas, A. Suziedelis, Int. J. Infrared Millim. Waves, 15, 525, 1994
- 5. D. Seliuta, V. Tamosiunas, E. Sirmulis, S. Asmontas, A. Suziedelis, J. Gradauskas, G. Valusis, P. Steenson, W.-H. Chow, P. Harrison, A. Lisauskas, H.G. Roskos, K. Kohler, Proc. 27th Int. Conf. on Physics of Semiconductors, Flagstaff, Arizona, 26-30 July 2004, submitted for publication
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n125kz