Monte Carlo Simulation of Dember Effect in n-InAs under Subpicosecond Laser Pulse Excitation

• Authors: V. Malevich
• Languages of publication: EN

Abstracts

EN

Monte Carlo method is used to simulate photo-Dember effect and generation of electromagnetic terahertz pulses in n-InAs excited by femtosecond laser radiation. Dynamics of electric field and transport of carriers were considered self-consistently. It is shown that, under excitation of semiconductor by laser pulses with photon energies<1.1 eV, the Dember photovoltage reaches a peak value (it can be in tens times larger than the typical Dember photo-electromotive force at stationary illumination) through 50-100 fs after excitation and then fades while oscillating with plasma frequency. Excitation of semiconductor by radiation with a greater photon energy (>1.1 eV) results in inter-valley transfer of photoelectrons and the photovoltage to decrease.

Keywords

EN

72.40.+w; 78.47.+p; 78.20.Bh

Discipline

• 78.20.Bh: Theory, models, and numerical simulation
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 169-173

Dates

published

2005-01

received

2004-08-22

Contributors

author

V. Malevich

• Institute of Physics, National Academy of Sciences of Belarus, Kuprevich 1, bl. 2, 220141 Minsk, Republic of Belarus

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Identifiers

DOI

10.12693/APhysPolA.107.169