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2005 | 107 | 1 | 169-173
Article title

Monte Carlo Simulation of Dember Effect in n-InAs under Subpicosecond Laser Pulse Excitation

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EN
Abstracts
EN
Monte Carlo method is used to simulate photo-Dember effect and generation of electromagnetic terahertz pulses in n-InAs excited by femtosecond laser radiation. Dynamics of electric field and transport of carriers were considered self-consistently. It is shown that, under excitation of semiconductor by laser pulses with photon energies<1.1 eV, the Dember photovoltage reaches a peak value (it can be in tens times larger than the typical Dember photo-electromotive force at stationary illumination) through 50-100 fs after excitation and then fades while oscillating with plasma frequency. Excitation of semiconductor by radiation with a greater photon energy (>1.1 eV) results in inter-valley transfer of photoelectrons and the photovoltage to decrease.
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EN
Year
Volume
107
Issue
1
Pages
169-173
Physical description
Dates
published
2005-01
received
2004-08-22
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n122kz
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