Small and Large Signal Analysis of Terahertz Generation from InN n^+nn^+ Structures with Free-Carrier Grating

• Authors: V. Gružinskis , P. Shiktorov , E. Starikov
• Languages of publication: EN

Abstracts

EN

Electron transport in long (up to 15μm) InN n^+nn^+ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n^+nn^+ structures under quasiballistic transport conditions.

Keywords

EN

72.20.Ht; 72.30.+q

Discipline

• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 163-168

Dates

published

2005-01

received

2004-08-22

Contributors

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.163