Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules

• Authors: D. Firsov , L. Vorobjev , V. Panevin , N. Fedosov , V. Shalygin , J. Samsonenko , A. Tonkikh , G. Cirlin , A. Andreev , N. Kryzhanovskaya , I. Tarasov , N. Pikhtin , V. Ustinov , S. Hanna , A. Seilmeier , F. Julien , N. Zakharov , P. Werner
• Languages of publication: EN

Abstracts

EN

Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.

Keywords

EN

78.30.Fs

Discipline

• 78.30.Fs: III-V and II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 158-162

Dates

published

2005-01

received

2004-08-22

Contributors

author

D. Firsov

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

L. Vorobjev

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

V. Panevin

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

N. Fedosov

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

V. Shalygin

• St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia

author

J. Samsonenko

• Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia

author

A. Tonkikh

• Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia

author

G. Cirlin

• Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia

author

A. Andreev

• Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

author

N. Kryzhanovskaya

• Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

author

I. Tarasov

• Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

author

N. Pikhtin

• Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

author

V. Ustinov

• Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

author

S. Hanna

• Institute of Physics, University of Bayreuth, 95440 Bayreuth, Germany

author

A. Seilmeier

• Institute of Physics, University of Bayreuth, 95440 Bayreuth, Germany

author

F. Julien

• Institut d'Eléctronique Fondamentale, Université Paris-Sud, 91405 Orsay, Paris, France

author

N. Zakharov

• Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany

author

P. Werner

• Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany

References

• 1. L.E. Vorobjev, JETP Lett., 68, 417, 98
• 2. A. Kastalsky, L.E. Vorobjev, D.A. Firsov, V.L. Zerova, E. Towe, IEEE J. Quantum Electron., 37, 1356, 01
• 3. M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyakov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, Phys. Rev. B, 62, 16671, 00

Identifiers

DOI

10.12693/APhysPolA.107.158