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2005 | 107 | 1 | 158-162
Article title

Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules

Content
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Languages of publication
EN
Abstracts
EN
Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.
Keywords
EN
Publisher

Year
Volume
107
Issue
1
Pages
158-162
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • St. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia
author
  • Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia
author
  • Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia
author
  • Institute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
  • Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
author
  • Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia
author
  • Institute of Physics, University of Bayreuth, 95440 Bayreuth, Germany
author
  • Institute of Physics, University of Bayreuth, 95440 Bayreuth, Germany
author
  • Institut d'Eléctronique Fondamentale, Université Paris-Sud, 91405 Orsay, Paris, France
author
  • Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
author
  • Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
References
  • 1. L.E. Vorobjev, JETP Lett., 68, 417, 98
  • 2. A. Kastalsky, L.E. Vorobjev, D.A. Firsov, V.L. Zerova, E. Towe, IEEE J. Quantum Electron., 37, 1356, 01
  • 3. M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyakov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, Phys. Rev. B, 62, 16671, 00
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n120kz
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