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2005 | 107 | 1 | 147-150
Article title

Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection

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EN
Abstracts
EN
Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n^+ junctions was observed experimentally in K_a frequency range, which coincides well with theoretical predictions.
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Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot 76100, Israel
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
References
  • 1. S. Asmontas, A. Suziedelis, J. Thermoelectricity N, 1, 5, 1997
  • 2. A. Suziedelis, J. Gradauskas, S. Asmontas, G. Valu sis, H.G. Roskos, J. Appl. Phys., 93, 3034, 2003
  • 3. S. Asmontas, J. Gradauskas, A. Suziedelis, G. Valu sis, Microelectronic Engineering, 53, 553, 2000
  • 4. S. Asmontas, J. Gradauskas, J. Paukste, V. Petkun, D. Seliuta, A. Suziedelis, E. Sirmulis, G. Valusis, Lithuanian J. Phys., 44, 263, 2004
  • 5. S. Asmontas, J. Gradauskas, J. Kundrotas, A. Suziedelis, A. Silenas, G. Valusis, in: Proc. 24th Int. Conf. on Physics of Semiconductors 24ICPS'98, August 1998, Jerusalem (Israel), Ed. D. Gershoni, CD-ROM (1193.pdf), World Scientific, 1999
  • 6. K. Ashida, M. Inoue, J. Shirafuji, Y. Inuishi, J. Phys. Soc. Jpn., 37, 408, 1974
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n118kz
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