Submicrometric Heavily Doped n-GaAs Structures for Microwave Detection

• Authors: S. Ašmontas , J. Gradauskas , A. Kozič , H. Shtrikmann , A. Sužiedėlis
• Languages of publication: EN

Abstracts

EN

Strong coupling between electrons and phonons in heavily doped semiconductors impedes, in general, investigation of hot carrier phenomena in the material. Investigations of hot electron electromotive force arising in symmetrically and asymmetrically shaped structures of heavily doped n-GaAs under microwave radiation are presented in this paper. Mesas of MBE grown n-GaAs layers with neck shaped down to submicron dimensions revealed strong dependence of voltage sensitivity of the structure on the size of the neck. Slight frequency dependence of voltage sensitivity of the microwave diodes with both symmetrically and asymmetrically shaped n-n^+ junctions was observed experimentally in K_a frequency range, which coincides well with theoretical predictions.

Keywords

EN

84.40.-x; 07.57.Kp

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 84.40.-x: Radiowave and microwave (including millimeter wave) technology(for microwave, submillimeter wave, and radiowave receivers and detectors, see 07.57.Kp; for microwave and radiowave spectrometers, see 07.57.Pt; for radiowave propagation, see 41.20.Jb)

• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 147-150

Dates

published

2005-01

received

2004-08-22

Contributors

author

S. Ašmontas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

J. Gradauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Kozič

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

H. Shtrikmann

• Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot 76100, Israel

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. S. Asmontas, A. Suziedelis, J. Thermoelectricity N, 1, 5, 1997
• 2. A. Suziedelis, J. Gradauskas, S. Asmontas, G. Valu sis, H.G. Roskos, J. Appl. Phys., 93, 3034, 2003
• 3. S. Asmontas, J. Gradauskas, A. Suziedelis, G. Valu sis, Microelectronic Engineering, 53, 553, 2000
• 4. S. Asmontas, J. Gradauskas, J. Paukste, V. Petkun, D. Seliuta, A. Suziedelis, E. Sirmulis, G. Valusis, Lithuanian J. Phys., 44, 263, 2004
• 5. S. Asmontas, J. Gradauskas, J. Kundrotas, A. Suziedelis, A. Silenas, G. Valusis, in: Proc. 24th Int. Conf. on Physics of Semiconductors 24ICPS'98, August 1998, Jerusalem (Israel), Ed. D. Gershoni, CD-ROM (1193.pdf), World Scientific, 1999
• 6. K. Ashida, M. Inoue, J. Shirafuji, Y. Inuishi, J. Phys. Soc. Jpn., 37, 408, 1974

Identifiers

DOI

10.12693/APhysPolA.107.147