Spontaneous Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Ge

• Authors: A. Andrianov , A. Zaharin , I. Yassievich , N. Zinovev
• Languages of publication: EN

Abstracts

EN

The spectra of spontaneous terahertz (THz) electroluminescence at the breakdown of shallow Ga acceptor in Ge were observed for the first time and investigated. We found and characterized the emission lines corresponding to the hole transitions between the excited states and the ground state of the impurity center as well as the transitions of the hot holes from the valence band to the impurity and within the valence band. A high quantum yield of the radiative transitions will become an important factor in designing electrically pumped THz emitters for the≈2 THz spectral range.

Keywords

EN

78.67.De; 78.60.Fi; 07.57.Hm

Discipline

• 78.60.Fi: Electroluminescence
• 78.67.De: Quantum wells
• 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 142-146

Dates

published

2005-01

received

2004-08-22

Contributors

author

A. Andrianov

• Ioffe Physical Technical Institute of Russian Academy of Sciences, 26 Politehnicheskaya, St Petersburg, 194021 Russia

author

A. Zaharin

• Ioffe Physical Technical Institute of Russian Academy of Sciences, 26 Politehnicheskaya, St Petersburg, 194021 Russia

author

I. Yassievich

• Ioffe Physical Technical Institute of Russian Academy of Sciences, 26 Politehnicheskaya, St Petersburg, 194021 Russia

author

N. Zinovev

• Ioffe Physical Technical Institute of Russian Academy of Sciences, 26 Politehnicheskaya, St Petersburg, 194021 Russia

References

• 1. R. Kohler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchie, R.C. Iotti, F. Rossi, Nature, 417, 156, 2002
• 2. T.N. Adam, R.T. Troeger, S.K. Ray, P.-C. Lv, J. Kolodzey, Appl. Phys. Lett., 83, 1713, 2003
• 3. S.H. Koenig, R.D. Brown, Phys. Rev. Lett., 4, 170, 1960
• 4. S.R. Thomas, H.Y. Fan, Phys. Rev. B, 9, 4295, 1974
• 5. L.V. Berman, L.I. Gavrilenko, Z.F. Krasilnik, V.V. Nikonorov, S.A. Pavlov, A.P. Chebotarev, Semiconductors, 19, 369, 1985
• 6. Yu.L. Ivanov, in: Voprosy fiziki poluprovodnikov (Materials of XI Winter School of Physics of Semicond.), Ioffe Institute, Leningrad 1984, p. 160
• 7. Y.P. Gousev, I.V. Altukhov, K.A. Korolev, V.P. Sinis, M.S. Kagan, E.E. Haller, M.A. Odnobludov, I.N. Yassievich, K.A. Chao, Appl. Phys. Lett., 75, 757, 1999
• 8. N.N. Zinovev, A.V. Andrianov, V.N. Nekrasov, V.A. Petrovskii, L.V. Belykov, O.M. Sresely, G. Hill, J.M. Chamberlain, JETP Lett., 74, 100, 2001
• 9. N.N. Zinovev, A.V. Andrianov, V.N. Nekrasov, L.V. Belykov, O.M. Sresely, G. Hill, J.M. Chamberlain, Semiconductors, 36, 226, 2002
• 10. R. Newman, W.W. Tyler, in: Solid State Physics, Vol. 1, Ed. F. Seitz, D. Turnbull, Academic Press, New York 1959, p. 50
• 11. W. Quade, G. Hupper, E. Scholl, Phys. Rev. B, 49, 13408, 1994

Identifiers

DOI

10.12693/APhysPolA.107.142