Terahertz Emission from Narrow Gap Semiconductors Photoexcited by Femtosecond Laser Pulses

• Authors: R. Adomavičius , A. Urbanowicz , G. Molis , A. Krotkus
• Languages of publication: EN

Abstracts

EN

Large increase in the emitted terahertz power was observed for p-InAs samples with the p-doping levels of approximately 10^{16}-10^{17} cm^{-3}. This increase was explained by a large surface depletion layer and an electric-field-induced optical rectification effect in the layer. Terahertz fields radiated by the samples of all three investigated Cd_xHg_{1-x}Te layers was of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences that linear current surge effect is dominating over nonlinear optical rectification. Azimuthal angle and magnetic fields emission witness that it is caused by linear photo-Dember type processes.

Keywords

EN

42.65.Re; 07.57.Hm; 78.47.+p; 72.30.+q

Discipline

• 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)
• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 132-136

Dates

published

2005-01

received

2004-08-22

Contributors

author

R. Adomavičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

A. Urbanowicz

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

G. Molis

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

author

A. Krotkus

• Semiconductor Physics Institute, A. Goštauto 11, 01108, Vilnius, Lithuania

References

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• 6. S. L. Chuang, S. Schmitt-Rink, B.I. Greene, P.N. Saeta, A.F.J. Levi, Phys. Rev. Lett., 68, 102, 1992

Identifiers

DOI

10.12693/APhysPolA.107.132