Journal
Article title
Title variants
Languages of publication
Abstracts
Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
Discipline
Journal
Year
Volume
Issue
Pages
128-131
Physical description
Dates
published
2005-01
received
2004-08-22
Contributors
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
References
- 1. A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan, C. Jagadish, Appl. Phys. Lett., 66, 3304, 1995
- 2. R. Adomavicius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus, A. Piskarskas, Appl. Phys. Lett., 83, 5304, 2003
- 3. A. Krotkus, K. Bertulis, M. Kaminska, K. Korona, A. Wolos, J. Siegert, S. Marcinkevicius, J.-F. Roux, J.-L. Coutaz, IEE Proc. J. Optoelectron., 149, 111, 2002
- 4. Y. Zhang, E. Ding, T. Zhang, Nucl. Instrum. Methods Phys. Res. B, 152, 307, 1999
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n114kz