Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

• Authors: R. Adomavičius , S. Balakauskas , K. Bertulis , A. Geižutis , G. Molis , A. Krotkus
• Languages of publication: EN

Abstracts

EN

Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.

Keywords

EN

42.65.Re; 07.57.Hm; 78.47.+p

Discipline

• 07.57.Hm: Infrared, submillimeter wave, microwave, and radiowave sources(see also 42.72.Ai Infrared sources in optics)
• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 128-131

Dates

published

2005-01

received

2004-08-22

Contributors

author

R. Adomavičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

K. Bertulis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Geižutis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

G. Molis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Krotkus

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan, C. Jagadish, Appl. Phys. Lett., 66, 3304, 1995
• 2. R. Adomavicius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus, A. Piskarskas, Appl. Phys. Lett., 83, 5304, 2003
• 3. A. Krotkus, K. Bertulis, M. Kaminska, K. Korona, A. Wolos, J. Siegert, S. Marcinkevicius, J.-F. Roux, J.-L. Coutaz, IEE Proc. J. Optoelectron., 149, 111, 2002
• 4. Y. Zhang, E. Ding, T. Zhang, Nucl. Instrum. Methods Phys. Res. B, 152, 307, 1999

Identifiers

DOI

10.12693/APhysPolA.107.128