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Number of results
2005 | 107 | 1 | 128-131
Article title

Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications

Content
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Languages of publication
EN
Abstracts
EN
Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals.
Keywords
EN
Contributors
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
References
  • 1. A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H.H. Tan, C. Jagadish, Appl. Phys. Lett., 66, 3304, 1995
  • 2. R. Adomavicius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus, A. Piskarskas, Appl. Phys. Lett., 83, 5304, 2003
  • 3. A. Krotkus, K. Bertulis, M. Kaminska, K. Korona, A. Wolos, J. Siegert, S. Marcinkevicius, J.-F. Roux, J.-L. Coutaz, IEE Proc. J. Optoelectron., 149, 111, 2002
  • 4. Y. Zhang, E. Ding, T. Zhang, Nucl. Instrum. Methods Phys. Res. B, 152, 307, 1999
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n114kz
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