Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

• Authors: W. Knap , J. Łusakowski , F. Teppe , N. Dyakonova , Y. Meziani
• Languages of publication: EN

Abstracts

EN

The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si.

Keywords

EN

73.21.-b; 73.23.-b

Discipline

• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)
• 73.23.-b: Electronic transport in mesoscopic systems

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 82-91

Dates

published

2005-01

received

2004-08-22

Contributors

author

W. Knap

• GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France

author

J. Łusakowski

• GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

F. Teppe

• GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France

author

N. Dyakonova

• GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France

author

Y. Meziani

• GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France

References

• 1. E.B. Cole, R. Woodward, D.A. Crawley, V.P. Wallace, D. Arnone, Proc. SPIE Int. Soc. Opt. Eng., 4276, 1, 2001
• 2. B.H. Deng, C.W. Domier, A.J. Donne, K.C. Lee, N.C. Luhmann Jr., E. Mazzucato, T. Munsat, H. Park, M. van-de-Pol, IEEE MTT-S International Microwave Symposium Digest, 3, 1587, 2002
• 3. N. Sekine, K. Hirakawa, M. Vosseburger, P.H. Bolivar, H. Kurz, Phys. Rev. B, 64, 201323, 2001; R. Bratschitsch, R. Kersting, T. Muller, G. Strasser, K. Unterrainer, W. Fischler, R.A. Hopfel, Physica B, 272, 375, 1999
• 4. J.N. Heyman, P. Neocleous, D. Hebert, P.A. Crowell, T. Muller, K. Unterrainer, Phys. Rev. B, 64, 085202, 2001; D. Hashimshony, A. Zigler, K. Papadopoulos, Phys. Rev. Lett., 86, 2806, 2001; T. Dekorsy, H. Auer, H.J. Bakker, H.G. Roskos, H. Kurz, Phys. Rev. B, 53, 4005, 1996
• 5. I. Iguchi, Supercond. Sci. Technol., 13, 93, 2000
• 6. S. Hoffmann, M. Hofmann, E. Brundermann, M. Havenith, M. Matus, J.V. Moloney, A.S. Moskalenko, M. Kira, S.W. Koch, S. Saito, K. Sakai, Appl. Phys. Lett., 84, 3585, 2004
• 7. A.A. Andronov, V.A. Kozlov, S.A. Pavlov, S.G. Pavlov, Sov. Techn. Phys. Lett., 14, 891, 1988
• 8. R. Kohler, A. Tredicucci, C. Mauro, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchie, Appl. Phys. Lett., 84, 1266, 2004
• 9. M. Dyakonov, M.S. Shur, Phys. Rev. Lett., 71, 2465, 1993; M. Dyakonov, M.S. Shur, in: Terahertz Sources and Systems, Ed. R.E. Miles, Kluwer Academic Publishers, Netherlands 2001, p. 187
• 10. W. Knap, Y. Deng, S. Rumyantsev, J.-Q. Lu, M.S. Shur, C.A. Salor, L.C. Brunel, Appl. Phys. Lett., 80, 3433, 2002; W. Knap, Y. Deng, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 81, 4637, 2002
• 11. X.G. Peralta, S.J. Allen, M.C. Wanke, N.E. Harff, J.A. Simmons, M.P. Lilly, J.L. Reno, P.J. Burke, J.P. Eisenstein, Appl. Phys. Lett., 81, 1627, 2002
• 12. W. Knap, J. Lusakowski, T. Parenty, S. Bollaert, A. Cappy, V.V. Popov, M.S. Shur, Appl. Phys. Lett., 84, 2331, 2004
• 13. W. Knap, F. Teppe, Y.M. Meziani, N. Dyakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, M.S. Shur, Appl. Phys. Lett., 85, 675, 2004
• 14. W. Knap, J. Lusakowski, K. Karpierz, B. Orsal, J.L. Robert, J. Appl. Phys., 72, 680, 1992; G.E. Stillman, C.M. Wolfe, J.O. Dimmock, Solid State Commun., 7, 5, 1969
• 15. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.Q. Lu, R. Gaska, M.S. Shur, G. Simin, X. Hu, M. Asif-Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys., 91, 9346, 2002
• 16. W. Knap, D. Dur, A. Raymond, C. Meny, J. Leotin, S. Huant, B. Etienne, Rev. Sci. Instrum., 63, 3293, 1992
• 17. K. Lee, M.S. Shur, T.A. Fjeldly, T. Ytterdal, Semiconductor Device Modeling for VLSI, Prentice Hall, Englewood Cliffs, NJ 1993, p. 340

Identifiers

DOI

10.12693/APhysPolA.107.82