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2005 | 107 | 1 | 82-91
Article title

Terahertz Generation and Detection by Plasma Waves in Nanometer Gate High Electron Mobility Transistors

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EN
Abstracts
EN
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can reach THz frequencies for a nanometer size devices. As was predicted by Dyakonov and Shur in 1993, the steady state of the current flow in a gated 2D electron gas can become unstable leading to the emission of an electromagnetic radiation at the plasma wave frequencies. The theory predicted also that the plasma waves can be used for resonant detection of THz electromagnetic radiation. In the present paper we review our recent experiments on THz emission and detection performed on high electron mobility transistors based on different semiconductor structures: InGaAs/GaAlAs, GaAs/GaAlAs, and Si.
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Contributors
author
  • GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
  • GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
  • GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
author
  • GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
author
  • GES-UMR 5650 CNRS - Université Montpellier 2, 34900 Montpellier, France
References
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Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv107n109kz
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