Semiconductor Spintronics: Role of the Valence-Band Holes

• Authors: A. Dargys
• Languages of publication: EN

Abstracts

EN

Two aspects related to valence-band hole spin are considered: spin surfaces in p-type semiconductors and flipping of the hole spin by an ultrashort electric field pulse. It is shown that heavy, light, and split-off holes have different spin surfaces. In general, the shape of the surface in real semiconductors may depend on the hole wave vector direction and magnitude. The concept of spin surface is used to explain very strong anisotropy of hole spin injection efficiency observed recently in ferromagnetic-semiconductor structures and in optimizing ultrafast spin switching. It was shown that, of all spin flipping mechanisms, the most effective one is associated with hole transfer between different spin surfaces in high electric fields. The less effective mechanisms are related to valence band warping and nonparabolicity. Examples of the hole spin flipping dynamics and the discussion on ultrafast control of spin in semiconductors by π-type electrical pulses are presented.

Keywords

EN

72.20.Jv; 73.40.Gk; 78.55.-m; 79.90.+b

Discipline

• 79.90.+b: Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2005
• Volume: 107
• Issue: 1
• Pages: 46-55

Dates

published

2005-01

received

2004-08-22

Contributors

author

A. Dargys

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.107.46