La_{0.7}Sr_{0.3}MnO_3 Thin-Film Grain-Boundary Junctions on a Bi-Crystal Substrate

• Authors: P. Gierłowski , A. Szewczyk , A. Abal'oshev , E. Vlakhov , T. Donchev , B. Blagoev
• Languages of publication: EN

Abstracts

EN

Transport properties of 10μm to 30μm wide grain-boundary junctions ion-etched in thin colossal magnetoresistance La_{0. 7}Sr_{0.3}MnO_3 films deposited on a SrTiO_3 bi-crystal were investigated. We have measured the current-voltage characteristics in the temperature range from 4.2 K to 300 K without applied magnetic field, as well as the magnetoresistance at magnetic fields up to±10 kOe directed parallel to the film surface, both perpendicular and parallel to the direction of current flow through the junctions. The investigated junctions have nonlinear current-voltage characteristics in this temperature range and consist of several magnetic domains. The maximum magnetoresistance (R(H)-R _{max})/R_{max}, measured at 1 kOe was -17.6% at 4.1 K.

Keywords

EN

75.47.Lx; 75.47.Gk; 72.25.Mk

Discipline

• 75.47.Gk: Colossal magnetoresistance
• 72.25.Mk: Spin transport through interfaces
• 75.47.Lx: Magnetic oxides

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 5
• Pages: 715-719

Dates

published

2004-11

received

2004-06-06

Contributors

author

P. Gierłowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Szewczyk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Abal'oshev

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Vlakhov

• Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

author

T. Donchev

• Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

author

B. Blagoev

• Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

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Identifiers

DOI

10.12693/APhysPolA.106.715