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2004 | 106 | 3 | 367-381

Article title

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

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EN

Abstracts

EN
The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewμm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.

Keywords

Contributors

author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, Warsaw, Poland
  • Grenoble High Magnetic Field Laboratory, MPI/FKF and CNRS, Grenoble, France
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, Warsaw, Poland
  • Grenoble High Magnetic Field Laboratory, MPI/FKF and CNRS, Grenoble, France
author
  • Grenoble High Magnetic Field Laboratory, MPI/FKF and CNRS, Grenoble, France
  • Institute of Experimental Physics, Warsaw University, Hoża 69, Warsaw, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, Warsaw, Poland
  • Grenoble High Magnetic Field Laboratory, MPI/FKF and CNRS, Grenoble, France
author
  • Institute for Microstructural Sciences, NRC, Ottawa, K1A 0R6, Canada
  • Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv106n308kz
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