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2004 | 106 | 3 | 367-381
Article title

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

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EN
Abstracts
EN
The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewμm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.
Keywords
Year
Volume
106
Issue
3
Pages
367-381
Physical description
Dates
published
2004-09
received
2004-06-10
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv106n308kz
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