ArticleOriginal scientific text

Title

Charged Excitons in the Quantum Hall Regime

Authors 1, 1, 1, 1, 1,

Affiliations

  1. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Germany
  2. Walter-Schottky-Institut der Technischen Universität München, Am Coulombwall, Germany
  3. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany
  4. Physics Department, University of Utah, USA
  5. Department of Physics and Astronomy, University of Manitoba, Canada

Abstract

We review our recent optical experiments on two-dimensional electron systems at temperatures below 1 K and under high magnetic fields. The two-dimensional electron systems are realized in modulation-doped GaAs-AlGaAs single quantum wells. Via gate electrodes the carrier density of the two-dimensional electron systems can be tuned in a quite broad range between about 1×1010 cm-2 and 2×1011 cm-2. In dilute two-dimensional electron systems, at very low electron densities, we observe the formation of negatively charged excitons in photoluminescence experiments. In this contribution we report about the observation of a dark triplet exciton, which is observable at temperatures below 1 K and for electron filling factors <1/3, i.e., in the fractional quantum Hall regime only. In experiments where we have increased the density of the two-dimensional electron systems so that a uniform two-dimensional electron system starts to form, we have found a strong energy anomaly of the charged excitons in the vicinity of filling factor 1/3. This anomaly was found to exist in a very narrow parameter range of the density and temperature, only. We propose a model where we assume that localized charged excitons and a uniform Laughlin liquid coexist. The localized charged exciton in close proximity to the Laughlin liquid leads to the creation of a fractionally-charged quasihole in the liquid, which can account for the experimentally observed anomaly.

Keywords

71.35.-y, 71.30.+h, 71.35.Ji, 71.70.Ej

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Pages:
341-353
Main language of publication
English
Received
2004-06-10
Published
2004-09
Exact and natural sciences