Spin Switch and Spin Amplifier: Magnetic Bipolar Transistor in the Saturation Regime

• Authors: J. Fabian , I. Žutić
• Languages of publication: EN

Abstracts

EN

It is shown that magnetic bipolar transistors can amplify currents even in the saturation regime, in which both the emitter-base and collector-base junctions are forward biased. The collector current and the current gain can change sign as they depend on the relative orientation of the equilibrium spin in the base and on the nonequilibrium spin in the emitter and collector. The predicted phenomena should be useful for electrical detection of nonequilibrium spins in semiconductors, as well as for magnetic control of current amplification and for current switching.

Keywords

EN

72.25.Dc; 72.25.Mk

Discipline

• 72.25.Dc: Spin polarized transport in semiconductors
• 72.25.Mk: Spin transport through interfaces

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 109-118

Dates

published

2004-08

received

2004-05-28

Contributors

author

J. Fabian

• Institute for Theoretical Physics, Karl-Franzens University, Universitätsplatz 5, 8010 Graz, Austria

author

I. Žutić

• Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375, USA
• Condensed Matter Theory Center, Department of Physics, University of Maryland at College Park, College Park, Maryland 20742-4111, USA

References

• 1. R.H. Silsbee, Bull. Magn. Reson., 2, 284, 1980
• 2. M. Johnson, R.H. Silsbee, Phys. Rev. Lett., 55, 1790, 1985
• 3. M. Johnson, J. Magn. Magn. Mater., 156, 321, 1996
• 4. M. Johnson, Science, 260, 320, 1993
• 5. I. Žutić, J. Fabian, S. Das Sarma, Phys. Rev. Lett., 88, 066603, 2002
• 6. J. Fabian, I. Žutić, S. Das Sarma, Phys. Rev. B, 66, 165301, 2002
• 7. I. Žutić, J. Fabian, S.D. Sarma, Rev. Mod. Phys., 76, 323, 2004
• 8. J. Fabian, I. Žutić, S. Das Sarma (2002), cond-mat/0211639
• 9. Optical Orientation, Eds. F. Meier, B.P. Zakharchenya, North-Holland, New York 1984
• 10. R. Fiederling, M. Kleim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, L.W. Molenkamp, Nature, 402, 787, 1999
• 11. B.T. Jonker, Y.D. Park, B.R. Bennett, H.D. Cheong, G. Kioseoglou, A. Petrou, Phys. Rev. B, 62, 8180, 2000
• 12. D.K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, H. Ohno, Appl. Phys. Lett., 80, 1598, 2002
• 13. X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G.S. Solomon, J. Harris, S.S.P. Parkin, Phys. Rev. Lett., 90, 256603, 2003
• 14. J. Fabian, I. Žutić, Phys. Rev. B, 69, 115314, 2004
• 15. W. Shockley, Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton 1950
• 16. J. Fabian, I. Žutić, S.D. Sarma, Appl. Phys. Lett., 84, 85, 2004
• 17. N. Lebedeva, P. Kuivalainen, J. Appl. Phys., 93, 9845, 2003
• 18. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno, Jpn. J. Appl. Phys., 40, L1274, 2001
• 19. E. Johnston-Halperin, D. Lofgreen, R.K. Kawakami, D.K. Young, L. Coldren, A.C. Gossard, D.D. Awschalom, Phys. Rev. B, 65, 041306, 2002
• 20. F. Tsui, L. Ma, L. He, Appl. Phys. Lett., 83, 954, 2003
• 21. Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang, H. Ohno, Appl. Surf. Sci., 159-160, 308, 2000

Identifiers

DOI

10.12693/APhysPolA.106.109