PL EN


Preferences help
enabled [disable] Abstract
Number of results
2004 | 106 | 2 | 109-118
Article title

Spin Switch and Spin Amplifier: Magnetic Bipolar Transistor in the Saturation Regime

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
It is shown that magnetic bipolar transistors can amplify currents even in the saturation regime, in which both the emitter-base and collector-base junctions are forward biased. The collector current and the current gain can change sign as they depend on the relative orientation of the equilibrium spin in the base and on the nonequilibrium spin in the emitter and collector. The predicted phenomena should be useful for electrical detection of nonequilibrium spins in semiconductors, as well as for magnetic control of current amplification and for current switching.
Keywords
EN
Publisher

Year
Volume
106
Issue
2
Pages
109-118
Physical description
Dates
published
2004-08
received
2004-05-28
Contributors
author
  • Institute for Theoretical Physics, Karl-Franzens University, Universitätsplatz 5, 8010 Graz, Austria
author
  • Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375, USA
  • Condensed Matter Theory Center, Department of Physics, University of Maryland at College Park, College Park, Maryland 20742-4111, USA
References
  • 1. R.H. Silsbee, Bull. Magn. Reson., 2, 284, 1980
  • 2. M. Johnson, R.H. Silsbee, Phys. Rev. Lett., 55, 1790, 1985
  • 3. M. Johnson, J. Magn. Magn. Mater., 156, 321, 1996
  • 4. M. Johnson, Science, 260, 320, 1993
  • 5. I. Žutić, J. Fabian, S. Das Sarma, Phys. Rev. Lett., 88, 066603, 2002
  • 6. J. Fabian, I. Žutić, S. Das Sarma, Phys. Rev. B, 66, 165301, 2002
  • 7. I. Žutić, J. Fabian, S.D. Sarma, Rev. Mod. Phys., 76, 323, 2004
  • 8. J. Fabian, I. Žutić, S. Das Sarma (2002), cond-mat/0211639
  • 9. Optical Orientation, Eds. F. Meier, B.P. Zakharchenya, North-Holland, New York 1984
  • 10. R. Fiederling, M. Kleim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, L.W. Molenkamp, Nature, 402, 787, 1999
  • 11. B.T. Jonker, Y.D. Park, B.R. Bennett, H.D. Cheong, G. Kioseoglou, A. Petrou, Phys. Rev. B, 62, 8180, 2000
  • 12. D.K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, H. Ohno, Appl. Phys. Lett., 80, 1598, 2002
  • 13. X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G.S. Solomon, J. Harris, S.S.P. Parkin, Phys. Rev. Lett., 90, 256603, 2003
  • 14. J. Fabian, I. Žutić, Phys. Rev. B, 69, 115314, 2004
  • 15. W. Shockley, Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton 1950
  • 16. J. Fabian, I. Žutić, S.D. Sarma, Appl. Phys. Lett., 84, 85, 2004
  • 17. N. Lebedeva, P. Kuivalainen, J. Appl. Phys., 93, 9845, 2003
  • 18. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno, Jpn. J. Appl. Phys., 40, L1274, 2001
  • 19. E. Johnston-Halperin, D. Lofgreen, R.K. Kawakami, D.K. Young, L. Coldren, A.C. Gossard, D.D. Awschalom, Phys. Rev. B, 65, 041306, 2002
  • 20. F. Tsui, L. Ma, L. He, Appl. Phys. Lett., 83, 954, 2003
  • 21. Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang, H. Ohno, Appl. Surf. Sci., 159-160, 308, 2000
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv106n213kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.