PL EN


Preferences help
enabled [disable] Abstract
Number of results
2004 | 106 | 2 | 215-221
Article title

(Eu,Gd)Te - MBE Growth and Characterization

Content
Title variants
Languages of publication
EN
Abstracts
EN
Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF_2 (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10^{20}~cm^{-3} and sharp maximum of resistivity at transition temperature.
Keywords
EN
Year
Volume
106
Issue
2
Pages
215-221
Physical description
Dates
published
2004-08
received
2004-05-28
References
  • 1. S. Methfessel, D.C. Mattis, Magnetic Semiconductors, Springer, Berlin 1968
  • 2. P. Wachter, in: Handbook on Physics and Chemistry of Rare Earth, Eds. K.A. Gschneider, L. Eyring, Vol. 2, North Holland, Amsterdam 1979, p. 507
  • 3. A. Mauger, C. Godart, Phys. Rep., 141, 51, 1986
  • 4. H. Rho, C.S. Snow, S.L. Lopez, Z. Fisk, A. Comment, J.-Ph. Ansermet, Phys. Rev. Lett., 88, 127401, 2002
  • 5. S. von Molnar, J. Supercond., 16, 1, 2003
  • 6. F. Holtzberg, T.R. McGuire, S. Methfessel, J. Appl. Phys., 37, 976, 1966
  • 7. B.A. Orłowski, S. Mickievicius, V. Osinniy, A.J. Nadolny, B. Taliashvili, P. Dziawa, T. Story, R. Medicherls, W. Drube, to be published in J. Alloys Comp. 2005
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv106n212kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.