(Eu,Gd)Te - MBE Growth and Characterization

• Authors: P. Dziawa , B. Taliashvili , W. Domuchowski , E. Łusakowska , M. Arciszewska , I. Demchenko , W. Dobrowolski , K. Dybko , O. Fedorych , A. Nadolny , V. Osinniy , A. Petrouchyk , T. Story
• Languages of publication: EN

Abstracts

EN

Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF_2 (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10^{20}~cm^{-3} and sharp maximum of resistivity at transition temperature.

Keywords

EN

75.50.Pp   81.15.Hi  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 215-221

Dates

published

2004-08

received

2004-05-28

References

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Identifiers

DOI

10.12693/APhysPolA.106.215