Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

• Authors: S. Miasojedovas , S. Juršėnas , G. Kurilčik , A. Žukauskas , V. Ivanov , M. Godlewski , M. Leszczyński , P. Perlin , T. Suski
• Languages of publication: EN

Abstracts

EN

We report on high-excitation luminescence spectroscopy in In_xGa_{1-x}N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures

Keywords

EN

78.45.+h; 78.47.+p; 78.67.De

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 78.67.De: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 273-279

Dates

published

2004-08

received

2004-05-28

Contributors

author

S. Miasojedovas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania

author

S. Juršėnas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania

author

G. Kurilčik

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania

author

A. Žukauskas

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania

author

V. Ivanov

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
• Dept. Math. and Natural Sci. College of Science, Cardinal S. Wyszyński Univ., Warsaw, Poland

author

M. Leszczyński

• High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland

author

P. Perlin

• High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland

author

T. Suski

• High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.106.273