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2004 | 106 | 2 | 273-279
Article title

Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

Content
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Languages of publication
EN
Abstracts
EN
We report on high-excitation luminescence spectroscopy in In_xGa_{1-x}N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Keywords
EN
Year
Volume
106
Issue
2
Pages
273-279
Physical description
Dates
published
2004-08
received
2004-05-28
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv106n211kz
Identifiers
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