Metastability of Band-Gap Energy in GaInNAs Compound Investigated by Photoreflectance

• Authors: R. Kudrawiec , J. Misiewicz , E. Pavelescu , J. Konttinen , M. Pessa
• Languages of publication: EN

Abstracts

EN

The band-gap energy of GaInNAs layers lattice-matched to GaAs substrate and annealed under different temperatures is investigated by photoreflectance spectroscopy. Different nitrogen nearest-neighbor environments of N atom appear in GaInNAs layers due to the post-growth annealing. It leads to an energy-fine structure of the band gap, i.e. well separated photoreflectance resonances related to different nitrogen nearest-neighbor environments (N-Ga_{4-m}In_m (0≤ m≤ 4) short-range-order clusters). The temperature dependence of the band gap E(T) related to different N-Ga_{4-m}In_m clusters is investigated in 10-280 K temperature range, and Varshni and Bose-Einstein parameters for E(T) are determined.

Keywords

EN

73.22.-f; 78.66.-w; 78.30.-j

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 73.22.-f: Electronic structure of nanoscale materials and related systems
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 249-263

Dates

published

2004-08

received

2004-05-28

Contributors

author

R. Kudrawiec

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

author

E. Pavelescu

• Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland

author

J. Konttinen

• Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland

author

M. Pessa

• Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland

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Identifiers

DOI

10.12693/APhysPolA.106.249