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2004 | 106 | 2 | 249-263
Article title

Metastability of Band-Gap Energy in GaInNAs Compound Investigated by Photoreflectance

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EN
Abstracts
EN
The band-gap energy of GaInNAs layers lattice-matched to GaAs substrate and annealed under different temperatures is investigated by photoreflectance spectroscopy. Different nitrogen nearest-neighbor environments of N atom appear in GaInNAs layers due to the post-growth annealing. It leads to an energy-fine structure of the band gap, i.e. well separated photoreflectance resonances related to different nitrogen nearest-neighbor environments (N-Ga_{4-m}In_m (0≤ m≤ 4) short-range-order clusters). The temperature dependence of the band gap E(T) related to different N-Ga_{4-m}In_m clusters is investigated in 10-280 K temperature range, and Varshni and Bose-Einstein parameters for E(T) are determined.
Keywords
EN
Contributors
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland
author
  • Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland
author
  • Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland
References
  • 1. M. Kondow, K. Uomi, A. Niwa, T. Kikatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys., 35 (2B), 1273, 1996
  • 2. J.S. Harris Jr, Semicond. Sci. Technol., 17, 880, 2002
  • 3. M. Reinhardt, M. Fischer, M. Kamp, J. Hofmann, A. Forchel, IEEE Photon. Technol. Lett., 12, 239, 2000
  • 4. M. Fischer, D. Gollub, A. Forchel, Jpn. J. Appl. Phys. Part 1, 41, 1162, 2002
  • 5. W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa, Appl. Phys. Lett., 79, 3386, 2001
  • 6. M. Kawaguchi, T. Miyamoto, E. Gouardes, D. Schlenker, T. Kondo, F. Koyama, K. Iga, Jpn. J. Appl. Phys. Part 2, 40, L744, 2001
  • 7. W. Shan, W. Walukiewicz, J.W. Ager III, E.E. Haller, J.F. Geisz, D.J. Friedman, J.M. Olson, S.R. Krutz, Phys. Rev. Lett., 82, 1221, 1999
  • 8. P.R.C. Kent, A. Zunger, Phys. Rev. Lett., 86, 2613, 2001
  • 9. P.R.C. Kent, A. Zunger, Phys. Rev. B, 64, 115208, 2001
  • 10. A. Al-Yacoub, L. Bellaiche, Phys. Rev. B, 62, 10847, 2000
  • 11. P.J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A.M. Kamal Saadi, A. Lindsay, E.P. O'Reilly, Phys. Rev. B, 64, 121203(R), 2001
  • 12. N.G. Szwacki, P. Boguslawski, Phys. Rev. B, 64, 161201, 2001
  • 13. I. Gorczyca, C. Skierbiszewski, T. Suski, N.E. Christensen, A. Svane, Phys. Rev. B, 66, 081106, 2002
  • 14. J. Wagner, T. Geppert, K. Kohler, P. Ganser, N. Herres, J. Appl. Phys., 90, 5027, 2001
  • 15. T. Kitatani, M. Kondow, M. Kudo, Jpn. J. Appl. Phys., 40, L750, 2001
  • 16. S.R. Kurtz, J.F. Klem, A.A. Allerman, R.M. Sieg, C.H. Seager, E.D. Jones, Appl. Phys. Lett., 80, 1379, 2001
  • 17. S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, N. Karam, Appl. Phys. Lett., 78, 748, 2000
  • 18. R. Kudrawiec, G. Sek, J. Misiewicz, D. Gollub, A. Forchel, Appl. Phys. Lett., 83, 2772, 2003
  • 19. R. Kudrawiec, E.-M. Pavelescu, J. Wagner, G. S/ek, J. Misiewicz, J. Konttinen, M. Pessa, J. Appl. Phys., in press
  • 20. K. Uesugi, I. Suemune, T. Hasegawa, T. Akutagawa, T. Nakamura, Appl. Phys. Lett., 76, 1285, 2000
  • 21. I. Suemune, K. Useugi, W. Walukiewicz, Appl. Phys. Lett., 77, 3021, 2000
  • 22. R. Chtourou, F. Bousbih, S. Ben Bouzid, F.F. Charfi, J.C. Harmand, G. Ungaro, L. Largeau, Appl. Phys. Lett., 80, 2075, 2002
  • 23. A. Nishikawa, R. Katayama, K. Onabe, Y. Shiraki, J. Cryst. Growth, 251, 427, 2003
  • 24. R. Kudrawiec, G. Sek, J. Misiewicz, L.H. Li, J.C. Harmand, Solid State Commun., 129, 353, 2003
  • 25. J. Misiewicz, P. Sitarek, G. Sek, R. Kudrawiec, Mater. Sci., 21, 263, 2003
  • 26. D.E. Aspnes, Surf. Sci., 37, 418, 1973
  • 27. F.H. Pollak, in: Handbook on Semiconductors, Ed. T.S. Moss, Vol. 2, Elsevier Science, Amsterdam 1994, p. 527
  • 28. R. Kudrawiec, J. Misiewicz, L.H. Li, J.C. Harmand, Appl. Phys. Lett., 83, 1379, 2003
  • 29. R. Kudrawiec, J. Misiewicz, M. Fischer, A. Forchel, Phys. Status Solidi A, 201, 364, 2004
  • 30. K.P. Varshni, Physica, 34, 149, 1967
  • 31. P. Lautenschlager, P.B. Allen, M. Cardona, Phys. Rev. B, 33, 5501, 1986
  • 32. P. Lautenschlager, M. Garriga, M. Cardona, Phys. Rev. B, 35, 9174, 1987
  • 33. R. Passler, J. Appl. Phys., 89, 6235, 2001 and references therein
  • 34. R. Kudrawiec, G. Sek, J. Misiewicz, L.H. Li, J.C. Harmand, Eur. Phys. J. B, in press
  • 35. E.V. Rao, A. Ougazzaden, Y. Le Bellego, M. Juhel, Appl. Phys. Lett., 72, 1409, 1998
  • 36. H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki, K. Onabe, Phys. Status Solidi B, 228, 273, 2001
Document Type
Publication order reference
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bwmeta1.element.bwnjournal-article-appv106n209kz
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