Transport and Magnetic Properties of Pb_{1-x}Mn_xTe Doped with Cr and Mo

• Authors: A. Artamkin , A. Kozhanov , M. Arciszewska , W. Dobrowolski , T. Story , E. Slynko , W. Slynko , D. Khokhlov
• Languages of publication: EN

Abstracts

EN

Transport and magnetic properties of Pb_{1-x}Mn_xTe (x<0.18) semiconductor alloys doped with Cr or Mo are investigated in a broad range of temperatures and magnetic fields. In PbMnTe(Cr) alloys the Fermi level may be pinned either in the conduction band or in the energy gap, depending on Mn concentration. In PbMnTe(Mo) alloys the pinning of the Fermi level is observed in the valence band as well as in the energy gap. In the latter case persistent photoconductivity is observed at low temperatures. The analysis of the temperature dependence of magnetic susceptibility shows that PbMnTe alloys doped with Cr or Mo are Curie-Weiss paramagnets revealing weak antiferromagnetic interactions between magnetic ions.

Keywords

EN

71.28.+d

Discipline

• 71.28.+d: Narrow-band systems; intermediate-valence solids(for magnetic aspects, see 75.20.Hr and 75.30.Mb in magnetic properties and materials)

• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 223-231

Dates

published

2004-08

received

2004-05-28

Contributors

author

A. Artamkin

• M.V. Lomonosov Moscow State University, Vorobjevy Gory, 1, Moscow 119992, Russia

author

A. Kozhanov

• M.V. Lomonosov Moscow State University, Vorobjevy Gory, 1, Moscow 119992, Russia

author

M. Arciszewska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, Warsaw 02-668, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, Warsaw 02-668, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, Warsaw 02-668, Poland

author

E. Slynko

• Chernovtsy Division of Institute of Problems of Semiconductor Material Science, National Ukrainian Academy of Sciences, I. Vilde, 5, Chernovtsy 274001, Ukraine

author

W. Slynko

• Chernovtsy Division of Institute of Problems of Semiconductor Material Science, National Ukrainian Academy of Sciences, I. Vilde, 5, Chernovtsy 274001, Ukraine

author

D. Khokhlov

• M.V. Lomonosov Moscow State University, Vorobjevy Gory, 1, Moscow 119992, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.106.223