Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

• Authors: L. Gelczuk , M. Dąbrowska-Szata , G. Jóźwiak , D. Radziewicz
• Languages of publication: EN

Abstracts

EN

Two deep traps associated with lattice-mismatch induced defects in n-type In_{0.042}Ga_{0.958}As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.

Keywords

EN

71.55.-i; 71.55.Eq; 71.20.Nr

Discipline

• 71.55.Eq: III-V semiconductors
• 71.20.Nr: Semiconductor compounds
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 2
• Pages: 265-272

Dates

published

2004-08

received

2004-05-28

Contributors

author

L. Gelczuk

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

M. Dąbrowska-Szata

• Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

G. Jóźwiak

• Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

D. Radziewicz

• Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

References

• 1. O. Yastrubchak, T. Wosiński, A. Mąkosa, T. Figielski, A.L. Tóth, Physica B, 308-310, 757, 2001
• 2. D.V. Lang, J. Appl. Phys., 45, 3023, 1974
• 3. T. Figielski, Phys. Status Solidi, 121, 187, 1990
• 4. L. Dobaczewski, P. Kaczor, I. D. Hawkins, A. R. Peaker, J. Appl. Phys., 76, 194, 1994
• 5. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, M. Seibt, Phys. Rev. B, 52, 13726, 1995
• 6. L.C. Kimerling, J.R. Patel, Appl. Phys. Lett., 34,, 73, 1979
• 7. P. Omling, L. Samuelson, H. G. Grimmeiss, J. Appl. Phys., 54, 5117, 1983
• 8. P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel, Phys. Rev. B, 32, 6571, 1985
• 9. D. Stievenard, M. Lannoo, J.C. Bourgoin, Solid-State Electron., 28, 485, 1985
• 10. D. Pons, J. Appl. Phys., 55, 3644, 1984
• 11. A. Ito, Y. Tokuda, Solid-State Electron., 46, 1307, 2002
• 12. T. Wosiński, J. Appl. Phys., 65, 1566, 1989
• 13. T. Figielski, Solid-State Electron., 21, 1403, 1978
• 14. L. Panepinto, U. Zeimer, W. Seifert, M. Seibt, F. Bugge, M. Weyers, W. Schröter, Mater. Sci. Eng. B, 42, 77, 1996
• 15. S.W. Provencher, Comp. Phys. Commun., 27, 213, 1982
• 16. Z. Kancleris, A. Matulis, Lithuanian J. Phys., 37, 475, 1997

Identifiers

DOI

10.12693/APhysPolA.106.265