Trapping Center Parameters in TlInS_2 Layered Crystals by Thermally Stimulated Current Measurements

• Authors: N. Yuksek , N. Gasanly , H. Ozkan , O. Karci
• Languages of publication: EN

Abstracts

EN

Thermally stimulated current measure ments are carried out on TlInS_2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS_2 crystal in the low-temperature region.

Keywords

EN

71.55.-i; 72.80.Jc

Discipline

• 72.80.Jc: Other crystalline inorganic semiconductors
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 106
• Issue: 1
• Pages: 95-103

Dates

published

2004-07

received

2004-05-04

Contributors

author

N. Yuksek

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

H. Ozkan

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

author

O. Karci

• Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.106.95