Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization

• Authors: A. Wójcik , K. Kopalko , M. Godlewski , E. Łusakowska , W. Paszkowicz , K. Dybko , J. Domagała , A. Szczerbakow , E. Kamińska
• Languages of publication: EN

Abstracts

EN

Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component.

Keywords

EN

68.55.Jk; 68.55.Ln; 68.55.Nq; 78.66.Hf; 81.15.Kk

Discipline

• 78.66.Hf: II-VI semiconductors
• 68.55.Nq: Composition and phase identification
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 81.15.Kk: Vapor phase epitaxy; growth from vapor phase

• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 667-673

Dates

published

2004-06

received

2004-05-28

Contributors

author

A. Wójcik

• Dep. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Warsaw, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Dep. of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Szczerbakow

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. H. Nanto, T. Minami, S. Takata, Phys. Status Solidi A 65, K131 (1981)
• 2. H. Morgan, D.E. Brodie, Can. J. Phys. 60, 1387 (1982)
• 3. J. Aronovich, A. Ortiz, R.H. Bube, J. Vac. Sci. Technol. 16, 994 (1979)
• 4. R.D. Vispute, V. Talyansky, S. Choopun, R.P. Sharma, T. Venkatesan, M. He, X. Tang, J.B. Halpern, M.G. Spencer, Y.X. Li, L.G. Salamanca-Riba, A.A. Iliadis, K.A. Jones, Appl. Phys. Lett. 73, 348 (1998)
• 5. S. Bethke, H. Pan, B.W. Wesseis, Appl. Phys. Lett. 52, 138 (1988)
• 6. Y. Chen, D.M. Bagnall, H.J. Koh, K.T. Park, K. Hiraga, Z. Zhu, T.Yao, J. Appl. Phys. 84, 3912 (1998)
• 7. P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Sefawa, Solid State Commun. 103, 459 (1997)
• 8. K. Kopalko, M. Godlewski, E. Guziewicz, E. Łusakowska, W. Paszkowicz, J. Domaga/la, E. Dynowska, A. Szczerbakow, A. W/ojcik, M.R. Phillips, Vaccum 74, 269 (2004)
• 9. K. Kopalko, M. Godlewski, J.Z. Domagala, E. Lusakowska, W. Paszkowicz, A. Szczerbakow, Chem. Mater. 16, 1447 (2004)
• 10. L. Niinistö, J. Päiväsaari, J. Niinistö, M. Putkonen, M. Nieminen, Phys. Status Solidi A 201, 1443 (2004)

Identifiers

DOI

10.12693/APhysPolA.105.667