Investigation of Photoelectric Properties of ZnSe:Cr and ZnTe:V:Al by Picosecond Four-Wave Mixing Technique

• Authors: A. Kadys , M. Sudzius , K. Jarasiunas , V. Ivanov , M. Godlewski , J. Launay
• Languages of publication: EN

Abstracts

EN

Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr1+/Cr2+ states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as very fast carrier capture by Zn-vacancies.

Keywords

EN

73.50.Gr; 81.70.Fy; 61.72.Hh; 61.72.Ji

Discipline

• 81.70.Fy: Nondestructive testing: optical methods
• 73.50.Gr: Charge carriers: generation, recombination, lifetime, trapping, mean free paths
• 61.72.Hh: Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 651-657

Dates

published

2004-06

received

2004-05-28

Contributors

author

A. Kadys

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania

author

M. Sudzius

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania

author

K. Jarasiunas

• Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania

author

V. Ivanov

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Launay

• Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), 33608, Pessac, France

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Identifiers

DOI

10.12693/APhysPolA.105.651