Growth and Investigation of Oxide Heterostructures Based on Half-Metallic Fe3O4

• Authors: B. Vengalis , K. Šliužienė , V. Lisauskas
• Languages of publication: EN

Abstracts

EN

We report thin films of ferromagnetic Fe_3O_4 (magnetite) grown by a reactive magnetron sputtering at T=300÷450°C on lattice-matched MgO, and bilayer structures composed of Fe_3O_4 and underlying epitaxial films of highly conductive electron-doped In_2O_3〈Sn〉, LaNiO_3, and antiferromagnetic CoO. The prepared Fe3O4/MgO films and the bilayer structures demonstrated clearly defined resistance anomaly at Verwey transition point (T_V≈100-120 K). Formation of high resistance interlayer was indicated between the adjacent conducting Fe3O4 and LaNiO3 layers. However, relatively low interface resistivity of about 0.1 Ω cm^2 (at T=300 K) was estimated for the patterned Fe3O4/In2O3〈Sn〉 bilayer structures. Vertical electrical transport measurements revealed strong nonlinearity in the I-U dependences of the Fe3O4/In2O3 〈Sn〉 interface at T

Keywords

EN

75.47.Gk; 75.47.Lx; 07.57.Kp

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 75.47.Gk: Colossal magnetoresistance
• 75.47.Lx: Magnetic oxides

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2004
• Volume: 105
• Issue: 6
• Pages: 659-665

Dates

published

2004-06

received

2004-05-28

Contributors

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
• Gediminas Technical University, Saulėtekio al. 11, 10223 Vilnius, Lithuania

author

K. Šliužienė

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Lisauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

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• 3. S. Soeya, J. Hayakawa, H. Takahashi, K. Ito, C. Yamamoto, A. Kida, H. Asano, M. Matsui, Appl. Phys Lett. 80, 823 (2002)
• 4. S.B. Ogale, K. Ghosh, R.P. Sharma, R.L. Greene, R. Remesh, T. Venkatesen, Phys. Rev. B 57, 7823 (1998)
• 5. X.W. Li, A. Gupta, Gang Xiao, G.Q. Gong, J. Appl. Phys. 83, 7049 (1998)
• 6. J.R. Sun, C.M. Xiong, T.Y. Zhao, S.Y. Zhang, Y.F. Chen, B.G. Shen, Appl. Phys. Lett. 84, 1528 (2004)

Identifiers

DOI

10.12693/APhysPolA.105.659